This guide provides a deep dive into Silicon Carbide (SiC) devices, renowned for their superior efficiency and high-frequency operation. The guide explores the practical implications of driving SiC MOSFETs with a unipolar gate voltage and offers solutions to mitigate parasitic turn-on, enhancing system efficiency. Backed by extensive research and experimental data, this guide empowers professionals to make informed decisions, fully leverage SiC devices, and drive innovation in their respective fields.